du.(itoi ^products., qna. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 power field effect transistor n-channel enhancement-mode silicon gate tmos these tmos power fets are designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ? silicon gate for fast switching speeds ? switching times specified at 100c ? designer's data ? idss- vds(on)' vqs(th) and soa specified at elevated temperature ? rugged ? soa is power dissipation limited ? source to-draln diode characterized for use with inductive loads maximum ratings rating drain-source voltage drain-gate voltage (rqs - 1 mn) gate-source voltage continuous non-repetitive (tp < go ps) drain current continuous pulsed total powsr dissipation @ tc = 25'c derate above 25c operating and storage temperature range symbol vdss vdgr vgs vgsm id idm pd tj. tstg mth6n55 650 550 mthsn60 mtm6n60 600 600 20 40 6 30 150 1.2 -66 to 160 unit vdc vdc vdc vpk adc watts w/-c c thermal characteristics thermal resistance ? junction to cage ? junction to ambient maximum lead temperature for soldering purposes, 1/8" from caae for 6 seconds rfljc rsja tl 275 ?c/w c electrical characteristics |tc - 25'c unless otherwise noted) characteristic symbol mln max unit off characteristics drain-source breakdown voltage (vgs - 0, id = 0.25 ma) mth6n55 MTH6N60, mtm6n60 zero gate voltage drain current (vos = rated vdss. vgs = 0) (vds - -8 ra|stl vdss' vqs = . tj = "5-o vibridss bss 550 eoo - - 0.2 1 vdc madc mth6n55 MTH6N60 mtm6n60 tmos power fets 6 amperes 'ds(on) = 1-2 ohms 550 and 600 volts mtm6n60 to-204aa nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by n.i semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. ounlitv s*?mi-fv?nrlii?"tr?r?
mth/mtm6n55, 60 electrical characteristics ? continued |tc - 25c unless otherwise noted) characteristic symbol off characteristics gate-body leakage current, forward (vgsf = 20 vdc, vds - o) gate-body leakage current, reverse (vgsr = 20 vdc, vds = 01 'gssf igssr win ? ? max unit 100 100 nadc nadc on characteristics* gate threshold voltage (vds - vgs. id ? ' nvy tj = 100'c static drain-source on-resistance (vgs - 10 vdc, id ? 3 adc) drain-source on-voltage (vgs "10v) (id - 6 adc) (id = 3 adc, tj = 100c) forward transconductance (vds - 15v, iq - 3a) vgs(th) 'ds(on) vds(on) 9fs 2 1.5 ? - 2 4.5 4 1.2 9 7.2 - vdc ohms vdc mhos dynamic characteristics input capacitance output capacitance reverse transfer capacitance (vds - 26 v, vqs = o. f - 1 mhz) see figure 11 ciss cobs cr? ? ? - | 1800 350 150 pf switching characteristics* (tj - 100ci turn-on delay time rise time turn-off delay time fail time total gate charge gate-source charge gate-drain charge (vot) = 25 v, id - 0.6 rated id rgen " 60 ohms) see figures 13 and 14 (vds - 0-8 rated vdss. id - rated id, vqs - 10 v) see figure 12 'd(on) tr td(off) |
